Course Description
This course explores key advanced processes in CMOS fabrication that shape the functionality and performance of integrated circuits. It delves into chemical vapor deposition (CVD), from mass action laws and flow dynamics to advanced techniques like atomic layer deposition (ALD) and low-pressure CVD. Learners will gain an in-depth understanding of plasma-based processes, including plasma-enhanced CVD, sputtering, and reactive ion etching (RIE), as well as modern high-density plasma systems.
A major component of the course is optical lithography, covering design rules, masks, diffraction phenomena, resolution limits, and techniques for improving patterning precision. The course concludes with multilayer metallization, including silicidation, diffusion barriers, electroplating, and the Damascene process.
By combining process fundamentals with practical applications, this course equips participants with the knowledge needed to interpret and optimize advanced fabrication steps used in today’s semiconductor manufacturing.
What you'll learn
By the end of this course you will be able to:
• Explain the principles and equipment of CVD and differentiate between mass-limited and reaction-limited growth regimes.
• Analyze plasma generation and confinement methods, and evaluate their applications in deposition and etching.
• Describe plasma-based techniques including PECVD, sputtering, and RIE, understanding their mechanisms and industrial significance.
• Assess optical lithography processes, including mask design, resolution limits, and strategies for enhancing pattern fidelity.
• Outline metallization techniques such as multilayer structures, silicidation, electroplating, and planarization, understanding their role in device performance and reliability.
Requirements
• Complete Course: CMOS Fabrication Fundamentals
